產(chǎn)品分類
LPCVD臥式爐
所屬分類：
CVD設(shè)備
半導(dǎo)體工藝設(shè)備
臥式LPCVD
概要：
LPCVD設(shè)備是半導(dǎo)體集成電路制造的重要設(shè)備之一，主要用于POLY, D-POLY, SiN,LP-TEOS。
關(guān)鍵詞：
LPCVD臥式爐管設(shè)備
LPCVD臥式爐
產(chǎn)品概述/Product Introduction：
LPCVD設(shè)備是半導(dǎo)體集成電路制造的重要設(shè)備之一，主要用于POLY, D-POLY, SiN,LP-TEOS。
LPCVD equipment is one of the important equipments for semiconductor integrated circuit manufacturing.which is mainly used for the growth of LP-POLY,LP-DPOLY,LP-SiN，LP-TEOS thin films.
產(chǎn)品特點(diǎn)/Product Characteristics：
♦裝載采用碳化硅(SiC)懸臂槳，避免了與工藝管磨擦產(chǎn)生粉塵
Silicon carbide (SiC) cantilever paddle is used for loading, which avoids dust generated by friction with process pipe
♦溫度控制采用串級控制方式，對基片實(shí)際溫度進(jìn)行實(shí)時(shí)智能控制
The temperature control adopts cascade control mode, and the real-time intelligent control of the actual temperature of the substrate is carried out
♦工作壓力閉環(huán)自動(dòng)控制，提高工藝穩(wěn)定性和重復(fù)性
Closed-loop automatic control of chamber pressure improves process stability and repeatability
♦可根據(jù)客戶需求配置多工藝組合的機(jī)臺
Multi-process combination of machines according to customer demand
技術(shù)指標(biāo)/Technical Indicators：
♦晶片尺寸：6-8英寸 Wafer size: 6-8 inch wafer
♦制程溫度范圍：500°C-1000°C Process temperature range: 500°C-1000°C
♦恒溫區(qū)長度：≥800mm Length of constant temperature zone: ≥ 800 mm
♦控溫精度：±1°C Temperature control accuracy: ±1°C
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